The electrical properties of n-type crystals of InAs compound, grown from stoichiometric melt by the horizontal zone melting method, have been investigated in the temperature range of 4.2 K-300 K before and after fast neutron irradiation up to high integral fluences of 2×1018n∙cm-2. At a fixed temperature electrons concentration (n) increases almost by one order during irradiation, and practically does not change with increasing of temperature. n increases only slightly by increasing of temperature near 300 K, both before and after irradiation. When ≥ 4×1018cm-3 the change of during irradiation is negligible. Comparison of experimental data of mobility with theory shows that the privileged scattering mechanism of electrons at 300 K is scattering on optical phonons in InAs with 1016-1017 cm-3 and scattering on ions of impurity in InAs with n~1018-1019 cm-3. The analysis shows that during irradiation point type scattering centers of donor-type structural defects with shallow levels in the forbidden zone appear. Consequently, the mobility decreases during irradiation. At 300 K in sample with electrons concentration of 3×1016 cm-3 the mobility decreases by 5 times after irradiation, which is equivalent to the formation of 1.5×1019cm-3 charged point scattering centers.
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